The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
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- Synopsis
- This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0. 1eV, the thermal stability of NiGe is improved to 600â,,f and the contact resistivity of metal/n-Ge contact is drastically reduced to 3. 8×10−7Ω*cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
- Copyright:
- 2016
Book Details
- Book Quality:
- Publisher Quality
- ISBN-13:
- 9783662496831
- Publisher:
- Springer Berlin Heidelberg, Berlin, Heidelberg
- Date of Addition:
- 09/26/16
- Copyrighted By:
- Springer
- Adult content:
- No
- Language:
- English
- Has Image Descriptions:
- No
- Categories:
- Nonfiction, Science, Technology
- Submitted By:
- Bookshare Staff
- Usage Restrictions:
- This is a copyrighted book.