CMOS Analog Design Using All-Region MOSFET Modeling

By: Márcio Cherem Schneider and Carlos Galup-Montoro

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Synopsis: Comparing bipolar technology briefly but otherwise not considering it, Schneider and Galup-Montoro (both electrical engineering, Federal U. of Santa Catarina, Brazil) focus on analog MOS (metal-oxide-semiconductor) circuits at the transistor level. They use an accurate but simple MOS transistor model for design, in order to reduce the distance between hand design and simulation results. Instead of the usual separate analytical formulas for the strong-inversion and weak-inversion operation regions of a building block, they provide simple formulas that are valid in all operation regions, including moderate inversion. The unified design is particularly suitable for analog design in advanced complementary MOS (CMOS) technologies. Among their topics are temporal and spatial fluctuations in MOSFETs (MOS field-effect-transistors), current mirrors, basic gain stages, operational amplifiers, and fundamentals of sampled-data circuits. The text is suitable for analog CMOS design courses. Annotation ©2010 Book News, Inc. , Portland, OR (booknews. com)